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Amplifier, Distributed Power, 0.5 W 2.0-18.0 GHz
Features
0.5 Watt Saturated Output Power Level Variable Drain Voltage (5-10V) Operation MSAGTM Process Proven Manufacturability and Reliability
No Airbridges Polyimide Scratch Protection No Hydrogen Poisoning Susceptibility
MAAPGM0053-DIE
903217 -- Preliminary Information
Description
The MAAPGM0053-DIE is a single stage power amplifier with onchip bias networks. This product is fully matched to 50 ohms on both the input and output. It can be used as a power amplifier stage or as a driver stage in high power applications. Fabricated using M/A-COM's repeatable, high performance and highly reliable GaAs Multifunction Self-Aligned Gate (MSAGTM) Process, each device is 100% RF tested on wafer to ensure performance compliance. M/A-COM's MSAGTM process features robust silicon-like manufacturing processes, planar processing of ion implanted transistors, multiple implant capability enabling power, low-noise, switch and digital FETs on a single chip, and polyimide scratch protection for ease of use with automated manufacturing processes. The use of refractory metals and the absence of platinum in the gate metal formulation prevents hydrogen poisoning when employed in hermetic packaging.
Primary Applications
Test Equipment Electronic Warfare Radar
Electrical Characteristics: TB = 40C1, Z0 = 50, VDD = 8V, IDQ 250 mA2, Pin = 22 dBm
Parameter Bandwidth Output Power 1 dB Compression Point Small Signal Gain Input VSWR Output VSWR Gate Supply Current Drain Supply Current Noise Figure
1. 2. 1
M/A-COM Inc. and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. M/A-COM makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does M/A-COM assume any liability whatsoever arising out of the use or application of any product(s) or information.
Symbol f POUT P1dB G VSWR VSWR IGG IDD NF
Typical 2.0-18.0 27.0 26 6 1.5:1 1.5:1 3 400 7
Units GHz dBm dB dB
mA mA dB
TB = MMIC Base Temperature Adjust VGG between -2.4 and -1.5V to achieve IDQ indicated.
* North America Tel: 800.366.2266 / Fax: 978.366.2266 * Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300 * Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298 Visit www.macom.com for additional data sheets and product information.
Amplifier, Distributed Power, 0.5 W 2.0-18.0 GHz
Maximum Operating Conditions 3
Parameter Input Power Drain Supply Voltage Gate Supply Voltage Quiescent Drain Current (No RF, 40% Idss) Quiescent DC Power Dissipated (No RF) Junction Temperature Storage Temperature Die Attach Temperature Symbol PIN VDD VGG IDQ PDISS TJ TSTG Absolute Maximum 25.0 +12.0 -3.0 400 4.0 180 -55 to +150 310
MAAPGM0053-DIE
903217 -- Preliminary Information
Units dBm V V mA W C C C
3. Operation outside of these ranges may reduce product reliability. Operation at other than the typical values may result in performance outside the guaranteed limits.
Recommended Operating Conditions
Characteristic Drain Supply Voltage Gate Supply Voltage Input Power Junction Temperature Thermal Resistance MMIC Base Temperature Symbol VDD VGG PIN TJ JC TB 19.6 Note 4 Min 5.0 -2.4 Typ 8.0 -2.0 22.0 Max 10.0 -1.5 24.0 150 Unit V V dBm C C/W C
4. Maximum MMIC Base Temperature = 150C --JC* VDD * IDQ
Operating Instructions
This device is static sensitive. Please handle with care. To operate the device, follow these steps. 1. Apply VGG = -2 V, VDD= 0 V. 2. Ramp VDD to desired voltage, typically 8 V. 3. Adjust VGG to set IDQ. 4. Set RF input.
5. Power down sequence in reverse. Turn VGG off
last.
2
M/A-COM Inc. and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. M/A-COM makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does M/A-COM assume any liability whatsoever arising out of the use or application of any product(s) or information.
* North America Tel: 800.366.2266 / Fax: 978.366.2266 * Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300 2 * Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298 Visit www.macom.com for additional data sheets and product information.
Amplifier, Distributed Power, 0.5 W 2.0-18.0 GHz
35 33 31 29
Power Out Drain Current
MAAPGM0053-DIE
1.0 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0.0
10 9 8 7 Gain Input VSWR Output VSWR
903217 -- Preliminary Information
6
5
Power Out (dBm)
27 25 23 21 19 17 15 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18
Drain Current (A)
6 Gain (dB) 5 4 3 2 1 0 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20
4 VSWR 3 2 1
Frequency (GHz) Figure 1. Output Power and Drain Current at Pin = 22 dBm and VDD = 8V.
Frequency (GHz)
Figure 2: Small Signal Gain and VSWR at VD=5V
30 28 26 24
0.50 0.46 0.42 0.38
30 28 26 24
0.50 0.46 0.42 0.38 0.34 0.30 0.26 0.22 0.18
Po @ 2GHz Ids @ 2GHz Po @ 6GHz Ids @ 6GHz Po @ 10GHz Ids @ 10GHz Po @ 14GHz Ids @ 14GHz Po @ 18GHz Ids @ 18GHz
Power Out (dBm)
Drain Current (A)
Power Out (dBm)
22 20 18 16 14 12 10 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25
Po @ 2GHz Ids @ 2GHz Po @ 6GHz Ids @ 6GHz Po @ 10GHz Ids @ 10GHz Po @ 14GHz Ids @ 14GHz Po @ 18GHz Ids @ 18GHz
0.34 0.30 0.26 0.22 0.18 0.14 0.10
22 20 18 16 14 12 10 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25
0.14 0.10
Power In (dBm)
Figure 3. Output Power and Drain Current vs. Input Power at VDD = 5V.
Power In (dBm) Figure 4. Output Power and Drain Current vs. Input Power at VDD = 8V.
30 28 26 24
0.50 0.46 0.42 0.38 0.34 0.30 0.26 0.22 0.18
Po @ 2GHz Ids @ 2GHz Po @ 6GHz Ids @ 6GHz Po @ 10GHz Ids @ 10GHz Po @ 14GHz Ids @ 14GHz Po @ 18GHz Ids @ 18GHz
10 9 8 7
Power Out (dBm)
22 20 18 16 14 12 10 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25
Drain Current (A)
6
Gain (dB)
5 4 3 2 1 0 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30
Gain @ 2GHz Gain @ 6GHz Gain @ 10GHz Gain @ 14GHz Gain @ 18GHz
0.14 0.10
Power In (dBm)
Power Out (dBm)
Figure 5. Output Power and Drain Current vs. Input Power at VDD = 10V.
Figure 6. Compression Characteritics, Gain vs Power Out at VDD = 8V.
3
M/A-COM Inc. and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. M/A-COM makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does M/A-COM assume any liability whatsoever arising out of the use or application of any product(s) or information.
* North America Tel: 800.366.2266 / Fax: 978.366.2266 * Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300 * Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298 Visit www.macom.com for additional data sheets and product information.
Drain Current (A)
Amplifier, Distributed Power, 0.5 W 2.0-18.0 GHz Mechanical Information
Chip Size: 3.000 x 2.000 x 0.075 mm
1.042mm 0.137mm
MAAPGM0053-DIE
903217 -- Preliminary Information
(118 x 79 x 3 mils)
3.000mm
2.000mm 1.838mm
GND:G GND:G
VD
GND:D
GND:G
GND:G
GND:G
OUT
GND:G
GND:G GND:G GND:G GND:G GND:G GND:G GND:G GND:G G ND:G G ND:G GND:G GND:G GND:G GND:G GND:G GND:G GND:G GND:G G ND:G G ND:G
1.216mm
G ND:G
GND:G
GND:G
0.467mm 0.177mm
IN
GND:G
G ND:G
GND:G
VG
GND:D
G ND:G
0
2.341mm 2.843mm
0
Figure 7. Die Layout
Chip edge to bond pad dimensions are shown to the center of the bond pad.
Bond Pad Dimensions
Pad RF In and Out DC Drain Supply Voltage VDD DC Gate Supply Voltage VGG Size (m) 100 x 150 150 x 150 150 x 150 Size (mils) 4x8 8x6 4x6
4
M/A-COM Inc. and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. M/A-COM makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does M/A-COM assume any liability whatsoever arising out of the use or application of any product(s) or information.
* North America Tel: 800.366.2266 / Fax: 978.366.2266 * Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300 * Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298 Visit www.macom.com for additional data sheets and product information.
GND:G
GND:G
G ND:G
Amplifier, Distributed Power, 0.5 W 2.0-18.0 GHz Assembly and Bonding Diagram
VDD
0.1 F
MAAPGM0053-DIE
903217 -- Preliminary Information
100 pF
VD
GN D:G GN D:G
GND:D
RFOUT
GND:G
OUT
GND:G
GND:G GND:G GND:G GND:G GND:G GND:G GND:G GND:G GND:G GND:G
RFIN
GND:G
GND:G
GND:G
GND:G
GND:G
GND:G
GND:G
GND:G
GND:G
GND:G
GND :G
GND:G
GND:G
IN
GND:G
GND:G
G ND:G
VG
GND:D
GN D:G
GN D:G
GN D:G
GND:G G ND:G GND:G
VGG
100 pF
0.1 F
Figure 6. Recommended bonding diagram for pedestal mount. Support circuitry typical of MMIC characterization fixture for CW testing.
Assembly Instructions:
Die attach: Use AuSn (80/20) 1 mil. preform solder. Limit time @ 300 C to less than 5 minutes. Wirebonding: Bond @ 160 C using standard ball or thermal compression wedge bond techniques. For DC pad connections, use either ball or wedge bonds. For best RF performance, use wedge bonds of shortest length, although ball bonds are also acceptable. Biasing Note: Must apply negative bias to VGG before applying positive bias to VDD to prevent damage to amplifier.
5
M/A-COM Inc. and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. M/A-COM makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does M/A-COM assume any liability whatsoever arising out of the use or application of any product(s) or information.
* North America Tel: 800.366.2266 / Fax: 978.366.2266 * Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300 * Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298 Visit www.macom.com for additional data sheets and product information.

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